Intel invests another 20 billion US dollars to build 2 chip factories "1.8nm" process king returns
On September 9, local time, Intel CEO Henry Kissinger announced an investment of $20 billion in a new large-scale wafer fab in Ohio, USA, which is part of Intel's IDM 2.0 strategy. The entire investment plan is as high as $100 billion. Production, then the "1.8nm" process will allow Intel to return to the semiconductor leader.
Since Kissinger assumed the position of Intel CEO in February last year, he has begun to vigorously promote the construction of factories in the United States and around the world. Among them, the investment in the United States has exceeded 40 billion US dollars. Last year, he invested 20 billion US dollars to build a wafer factory in Arizona. Ohio is also investing $20 billion to build a new packaging and testing facility in New Mexico.
The Intel factory is also a large-scale semiconductor chip factory newly built in the United States after the US passed the $52.8 billion chip subsidy bill. For this reason, the President of the United States also attended the groundbreaking ceremony, as well as senior officials from local departments such as the Governor of Ohio.
Intel's chip manufacturing base will consist of 2 fabs, which can accommodate up to 8 factories and supporting ecological support systems, covering an area of nearly 1,000 acres, or 4 square kilometers, and will create 3,000 high-paying jobs. More than 7,000 construction jobs and tens of thousands of supply chain cooperation jobs.
The two fabs are expected to be mass-produced in 2025. Intel did not specifically mention the process level of the factory, but Intel previously stated that it would master the 5th-generation CPU process within 4 years, and mass-produce the 20A and 18A two-generation processes in 2024. , so the factory here should also mass-produce the 18A process by then.
20A and 18A are the world's first angstrom-level chip processes, equivalent to the 2nm and 1.8nm processes of friends, and will also debut Intel's two black technology technologies, Ribbon FET and PowerVia.
RibbonFET, Intel's implementation of the Gate All Around transistor, will be the company's first new transistor architecture since it pioneered FinFET in 2011, according to Intel. This technology speeds up transistor switching while achieving the same drive current as a multi-fin structure, but in a smaller footprint.
PowerVia is Intel's unique and industry-first backside power delivery network that optimizes signal transfer by eliminating the need for front-side power routing on the wafer.
