Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Rds On (Max) @ Id, Vgs:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Image Part Manufacturer Description MOQ Stock Action
TPC8212-H(TE12LQ,M Toshiba Semiconductor and Storage
MOSFET 2N-CH 30V 6A...
1
RFQ
50,000
In-stock
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TPC8213-H(TE12LQ,M Toshiba Semiconductor and Storage
MOSFET 2N-CH 60V 5A...
1
RFQ
50,000
In-stock
Get Quote
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