- Manufacturer：
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- Operating Temperature：
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- Package / Case：
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- Power - Max：
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- Supplier Device Package：
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- FET Feature：
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- Current - Continuous Drain (Id) @ 25°C：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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| Image | Part | Manufacturer | Description | MOQ | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage | SMALL LOW R-ON MO... |
1 |
50,000
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET 2N-CH 60V 0.6... |
1 |
50,000
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET 2N-CH 60V 0.6... |
1 |
3
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET 2N-CH 60V 0.6... |
1 |
50,000
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET 2N-CH 60V 0.6... |
1 |
50,000
In-stock
|
Get Quote |
