Transistors - IGBTs - Single - QAIC.com

Operating Temperature：

Supplier Device Package：

Reverse Recovery Time (trr)：

Current - Collector (Ic) (Max)：

Voltage - Collector Emitter Breakdown (Max)：

Vce(on) (Max) @ Vge, Ic：

Current - Collector Pulsed (Icm)：

Switching Energy：

Td (on/off) @ 25°C：

Test Condition：

Filter：

2 Records

Image	Part	Manufacturer	Description	MOQ		Stock	Action
	GT30J121(Q)	Toshiba Semiconductor and Storage	IGBT 600V 30A 170W TO...	1	PDF RFQ	50,000 In-stock	Get Quote
	NTE3322	NTE Electronics, Inc	IGBT-900V 60AMP	1	PDF RFQ	24 In-stock	Get Quote

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