BAS516,H3F

Mfr.Part #
BAS516,H3F
Manufacturer
Toshiba Semiconductor and Storage
Package/Case
-
Datasheet
Download
Description
DIODE GEN PURP 100V 250MA ESC
Stock:
In Stock

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Manufacturer :
Toshiba Semiconductor and Storage
Product Category :
Diodes - Rectifiers - Single
Capacitance @ Vr, F :
0.35pF @ 0V, 1MHz
Current - Average Rectified (Io) :
250mA
Current - Reverse Leakage @ Vr :
200 nA @ 80 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
150°C (Max)
Package / Case :
SC-79, SOD-523
Product Status :
Active
Reverse Recovery Time (trr) :
3 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
ESC
Voltage - DC Reverse (Vr) (Max) :
100 V
Voltage - Forward (Vf) (Max) @ If :
1.25 V @ 150 mA
Datasheets
BAS516,H3F

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