HSG1002VE-TL-E

Mfr.Part #
HSG1002VE-TL-E
Manufacturer
Rochester Electronics, LLC
Package/Case
-
Datasheet
Download
Description
RF 0.035A C BAND GERMANIUM NPN
Stock:
In Stock

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Manufacturer :
Rochester Electronics, LLC
Product Category :
Transistors - Bipolar (BJT) - RF
Current - Collector (Ic) (Max) :
35mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 5mA, 2V
Frequency - Transition :
38GHz
Gain :
8dB ~ 19.5dB
Mounting Type :
Surface Mount
Noise Figure (dB Typ @ f) :
0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Operating Temperature :
-
Package / Case :
4-SMD, Gull Wing
Power - Max :
200mW
Product Status :
Active
Supplier Device Package :
4-MFPAK
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
3.5V
Datasheets
HSG1002VE-TL-E

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