MJD253-1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

4 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 200mA, 1V

Frequency - Transition :

40MHz

Mounting Type :

Through Hole

Operating Temperature :

-65°C ~ 150°C (TJ)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power - Max :

1.4 W

Product Status :

Active

Supplier Device Package :

I-PAK

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

100 V