2SC5712(TE12L,F)

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

3 A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

400 @ 300mA, 2V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-243AA

Power - Max :

1 W

Product Status :

Active

Supplier Device Package :

PW-MINI

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

140mV @ 20mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

50 V