2SC5549,T6F(J

Manufacturer :

Toshiba Semiconductor and Storage

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 40mA, 5V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 Long Body

Power - Max :

900 mW

Product Status :

Obsolete

Supplier Device Package :

TO-92MOD

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1V @ 25mA, 200mA

Voltage - Collector Emitter Breakdown (Max) :

400 V