FD6M033N06

Mfr.Part #
FD6M033N06
Manufacturer
Rochester Electronics, LLC
Package/Case
-
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock:
In Stock

Request A Quote(RFQ)

* E-Mail:
* Part name:
* Quantity(pcs):
* Captcha:
loading...
Manufacturer :
Rochester Electronics, LLC
Product Category :
Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
73A
Drain to Source Voltage (Vdss) :
60V
FET Feature :
Standard
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
129nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
6010pF @ 25V
Mounting Type :
Through Hole
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
EPM15
Power - Max :
-
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
3.3mOhm @ 40A, 10V
Supplier Device Package :
EPM15
Vgs(th) (Max) @ Id :
4V @ 250µA
Datasheets
FD6M033N06

Manufacturer related products

  • Rochester Electronics, LLC
    LC706203 - DIGITAL MEMS MIC ICS
  • Rochester Electronics, LLC
    LC706161 - DIGITAL MEMS MIC ICS
  • Rochester Electronics, LLC
    OMNIDIRECTIONAL MICROPHONE WITH
  • Rochester Electronics, LLC
    RF HARDENED, ULTRALOW NOISE MICR
  • Rochester Electronics, LLC
    MIC MEMS ANALOG OMNI -38DB

Catalog related products

  • Micro Commercial Co
    DUAL N-CHANNEL MOSFET,SOT23-6L
  • Nexperia USA Inc.
    MOSFET 2P-CH 20V 0.5A 6DFN
  • Toshiba Semiconductor and Storage
    SMALL SIGNAL MOSFET P-CHX2 VDSS-
  • Rohm Semiconductor
    QH8K22 IS LOW ON - RESISTANCE MO
  • Rohm Semiconductor
    SH8KA1 IS A POWER TRANSISTOR WIT