BSM300D12P3E005
- Mfr.Part #
- BSM300D12P3E005
- Manufacturer
- Rohm Semiconductor
- Package/Case
- -
- Datasheet
- Download
- Description
- SILICON CARBIDE POWER MODULE. B
- Stock:
- In Stock
Request A Quote(RFQ)
- * E-Mail:
- * Part name:
- * Quantity(pcs):
- * Captcha:
-
- Manufacturer :
- Rohm Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 300A (Tc)
- Drain to Source Voltage (Vdss) :
- 1200V (1.2kV)
- FET Feature :
- Silicon Carbide (SiC)
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 14000pF @ 10V
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Module
- Power - Max :
- 1260W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- -
- Supplier Device Package :
- Module
- Vgs(th) (Max) @ Id :
- 5.6V @ 91mA
- Datasheets
- BSM300D12P3E005