EPC2106ENGRT

Mfr.Part #
EPC2106ENGRT
Manufacturer
EPC
Package/Case
-
Datasheet
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Description
GAN TRANS 2N-CH 100V BUMPED DIE
Stock:
In Stock

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Manufacturer :
EPC
Product Category :
Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
1.7A
Drain to Source Voltage (Vdss) :
100V
FET Feature :
GaNFET (Gallium Nitride)
FET Type :
2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs :
0.73nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
75pF @ 50V
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
Die
Power - Max :
-
Product Status :
Discontinued at Digi-Key
Rds On (Max) @ Id, Vgs :
70mOhm @ 2A, 5V
Supplier Device Package :
Die
Vgs(th) (Max) @ Id :
2.5V @ 600µA
Datasheets
EPC2106ENGRT

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