IXTN660N04T4

Manufacturer :

IXYS

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

660A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

Current Sensing

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

860 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

44000 pF @ 25 V

Mounting Type :

Chassis Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

SOT-227-4, miniBLOC

Power Dissipation (Max) :

1040W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

0.85mOhm @ 100A, 10V

Supplier Device Package :

SOT-227B

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±15V

Vgs(th) (Max) @ Id :

4V @ 250µA